Direct growth of β-SiC nanowires from SiO thin films deposited on Si (1 0 0) substrate

J.C. Li, C.S. Lee, S.T. Lee

Open source

DOI: 10.1016/s0009-2614(02)00198-7
Published: 2002-03
Container: Chemical Physics Letters
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0009-2614-02-00198-7,
  title = {Direct growth of β-SiC nanowires from SiO  thin films deposited on Si (1 0 0) substrate},
  author = {J.C. Li and C.S. Lee and S.T. Lee},
  year = {2002},
  journal = {Chemical Physics Letters},
  doi = {10.1016/s0009-2614(02)00198-7},
  url = {https://doi.org/10.1016/s0009-2614(02)00198-7}
}

RIS

TY  - JOUR
TI  - Direct growth of β-SiC nanowires from SiO  thin films deposited on Si (1 0 0) substrate
AU  - J.C. Li
AU  - C.S. Lee
AU  - S.T. Lee
PY  - 2002
JO  - Chemical Physics Letters
DO  - 10.1016/s0009-2614(02)00198-7
UR  - https://doi.org/10.1016/s0009-2614(02)00198-7
ER  -

APA

Li, J., Lee, C., & Lee, S. (2002). Direct growth of β-SiC nanowires from SiO thin films deposited on Si (1 0 0) substrate. Chemical Physics Letters. https://doi.org/10.1016/s0009-2614(02)00198-7

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crossref · retrieved 2026-09-26T05:11:30.412Z