Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy

E. Aujol, A. Trassoudaine, L. Siozade, A. Pimpinelli, R. Cadoret

Open source

DOI: 10.1016/s0022-0248(01)01263-5
Published: 2001-09
Container: Journal of Crystal Growth
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0022-0248-01-01263-5,
  title = {Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy},
  author = {E. Aujol and A. Trassoudaine and L. Siozade and A. Pimpinelli and R. Cadoret},
  year = {2001},
  journal = {Journal of Crystal Growth},
  doi = {10.1016/s0022-0248(01)01263-5},
  url = {https://doi.org/10.1016/s0022-0248(01)01263-5}
}

RIS

TY  - JOUR
TI  - Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy
AU  - E. Aujol
AU  - A. Trassoudaine
AU  - L. Siozade
AU  - A. Pimpinelli
AU  - R. Cadoret
PY  - 2001
JO  - Journal of Crystal Growth
DO  - 10.1016/s0022-0248(01)01263-5
UR  - https://doi.org/10.1016/s0022-0248(01)01263-5
ER  -

APA

Aujol, E., Trassoudaine, A., Siozade, L., Pimpinelli, A., & Cadoret, R. (2001). Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy. Journal of Crystal Growth. https://doi.org/10.1016/s0022-0248(01)01263-5

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crossref · retrieved 2026-09-25T12:38:43.693Z