Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals

G. Raming, A. Muižnieks, A. Mühlbauer

Open source

DOI
10.1016/s0022-0248(01)01323-9
Published
2001-08
Container
Journal of Crystal Growth
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/s0022-0248-01-01323-9,
  title = {Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals},
  author = {G. Raming and A. Muižnieks and A. Mühlbauer},
  year = {2001},
  journal = {Journal of Crystal Growth},
  doi = {10.1016/s0022-0248(01)01323-9},
  url = {https://doi.org/10.1016/s0022-0248(01)01323-9}
}

RIS

TY  - JOUR
TI  - Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals
AU  - G. Raming
AU  - A. Muižnieks
AU  - A. Mühlbauer
PY  - 2001
JO  - Journal of Crystal Growth
DO  - 10.1016/s0022-0248(01)01323-9
UR  - https://doi.org/10.1016/s0022-0248(01)01323-9
ER  - 

APA

Raming, G., Muižnieks, A., & Mühlbauer, A. (2001). Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals. Journal of Crystal Growth. https://doi.org/10.1016/s0022-0248(01)01323-9

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