Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals
- DOI
- 10.1016/s0022-0248(01)01323-9
- Published
- 2001-08
- Container
- Journal of Crystal Growth
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/s0022-0248-01-01323-9,
title = {Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals},
author = {G. Raming and A. Muižnieks and A. Mühlbauer},
year = {2001},
journal = {Journal of Crystal Growth},
doi = {10.1016/s0022-0248(01)01323-9},
url = {https://doi.org/10.1016/s0022-0248(01)01323-9}
}RIS
TY - JOUR TI - Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals AU - G. Raming AU - A. Muižnieks AU - A. Mühlbauer PY - 2001 JO - Journal of Crystal Growth DO - 10.1016/s0022-0248(01)01323-9 UR - https://doi.org/10.1016/s0022-0248(01)01323-9 ER -
APA
Raming, G., Muižnieks, A., & Mühlbauer, A. (2001). Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals. Journal of Crystal Growth. https://doi.org/10.1016/s0022-0248(01)01323-9
Source records
- crossref · retrieved 2026-09-26T21:50:10.879Z