Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy
- DOI
- 10.1016/s0022-0248(01)01664-5
- Published
- 2002-01
- Container
- Journal of Crystal Growth
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/s0022-0248-01-01664-5,
title = {Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy},
author = {L.W. Lu and W.K. Fong and C.F. Zhu and B.H. Leung and C. Surya and J. Wang and Weikun Ge},
year = {2002},
journal = {Journal of Crystal Growth},
doi = {10.1016/s0022-0248(01)01664-5},
url = {https://doi.org/10.1016/s0022-0248(01)01664-5}
}RIS
TY - JOUR TI - Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy AU - L.W. Lu AU - W.K. Fong AU - C.F. Zhu AU - B.H. Leung AU - C. Surya AU - J. Wang AU - Weikun Ge PY - 2002 JO - Journal of Crystal Growth DO - 10.1016/s0022-0248(01)01664-5 UR - https://doi.org/10.1016/s0022-0248(01)01664-5 ER -
APA
Lu, L., Fong, W., Zhu, C., Leung, B., Surya, C., Wang, J., & Ge, W. (2002). Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy. Journal of Crystal Growth. https://doi.org/10.1016/s0022-0248(01)01664-5
Source records
- crossref · retrieved 2026-09-26T03:30:28.352Z