The growth morphologies of GaN layer on Si(111) substrate

Yuan Lu, Xianglin Liu, Da-Cheng Lu, Hairong Yuan, Guiqing Hu, Xiaohui Wang, Zhanguo Wang, Xiaofeng Duan

DOI: 10.1016/s0022-0248(02)01953-x
Published: 2002
Container: Journal of Crystal Growth
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1016/s0022-0248-02-01953-x,
  title = {The growth morphologies of GaN layer on Si(111) substrate},
  author = {Yuan Lu and Xianglin Liu and Da-Cheng Lu and Hairong Yuan and Guiqing Hu and Xiaohui Wang and Zhanguo Wang and Xiaofeng Duan},
  year = {2002},
  journal = {Journal of Crystal Growth},
  doi = {10.1016/s0022-0248(02)01953-x},
  url = {https://doi.org/10.1016/s0022-0248(02)01953-x}
}

RIS

TY  - JOUR
TI  - The growth morphologies of GaN layer on Si(111) substrate
AU  - Yuan Lu
AU  - Xianglin Liu
AU  - Da-Cheng Lu
AU  - Hairong Yuan
AU  - Guiqing Hu
AU  - Xiaohui Wang
AU  - Zhanguo Wang
AU  - Xiaofeng Duan
PY  - 2002
JO  - Journal of Crystal Growth
DO  - 10.1016/s0022-0248(02)01953-x
UR  - https://doi.org/10.1016/s0022-0248(02)01953-x
ER  -

APA

Lu, Y., Liu, X., Lu, D., Yuan, H., Hu, G., Wang, X., Wang, Z., & Duan, X. (2002). The growth morphologies of GaN layer on Si(111) substrate. Journal of Crystal Growth. https://doi.org/10.1016/s0022-0248(02)01953-x

Source records

hal · retrieved 2026-09-26T03:56:15.116Z