Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories

S. Croci, C. Plossu, B. Balland, C. Raynaud, Ph. Boivin

Open source

DOI: 10.1016/s0022-3093(00)00376-8
Published: 2001-02
Container: Journal of Non-Crystalline Solids
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0022-3093-00-00376-8,
  title = {Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories},
  author = {S. Croci and C. Plossu and B. Balland and C. Raynaud and Ph. Boivin},
  year = {2001},
  journal = {Journal of Non-Crystalline Solids},
  doi = {10.1016/s0022-3093(00)00376-8},
  url = {https://doi.org/10.1016/s0022-3093(00)00376-8}
}

RIS

TY  - JOUR
TI  - Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories
AU  - S. Croci
AU  - C. Plossu
AU  - B. Balland
AU  - C. Raynaud
AU  - Ph. Boivin
PY  - 2001
JO  - Journal of Non-Crystalline Solids
DO  - 10.1016/s0022-3093(00)00376-8
UR  - https://doi.org/10.1016/s0022-3093(00)00376-8
ER  -

APA

Croci, S., Plossu, C., Balland, B., Raynaud, C., & Boivin, P. (2001). Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories. Journal of Non-Crystalline Solids. https://doi.org/10.1016/s0022-3093(00)00376-8

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crossref · retrieved 2026-09-26T05:48:26.384Z