Study of the effects of rapid thermal annealing in generation–recombination noise in MBE grown GaN thin films
- DOI
- 10.1016/s0026-2714(00)00066-4
- Published
- 2000-11
- Container
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/s0026-2714-00-00066-4,
title = {Study of the effects of rapid thermal annealing in generation–recombination noise in MBE grown GaN thin films},
author = {C. Surya and C.F. Zhu and B.H. Leung and W.K. Fong and C.C. Cheng and J.K.O. Sin},
year = {2000},
journal = {Microelectronics Reliability},
doi = {10.1016/s0026-2714(00)00066-4},
url = {https://doi.org/10.1016/s0026-2714(00)00066-4}
}RIS
TY - JOUR TI - Study of the effects of rapid thermal annealing in generation–recombination noise in MBE grown GaN thin films AU - C. Surya AU - C.F. Zhu AU - B.H. Leung AU - W.K. Fong AU - C.C. Cheng AU - J.K.O. Sin PY - 2000 JO - Microelectronics Reliability DO - 10.1016/s0026-2714(00)00066-4 UR - https://doi.org/10.1016/s0026-2714(00)00066-4 ER -
APA
Surya, C., Zhu, C., Leung, B., Fong, W., Cheng, C., & Sin, J. (2000). Study of the effects of rapid thermal annealing in generation–recombination noise in MBE grown GaN thin films. Microelectronics Reliability. https://doi.org/10.1016/s0026-2714(00)00066-4
Source records
- crossref · retrieved 2026-11-10T20:43:33.699Z