Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications

N. Revil, X. Garros

Open source

DOI: 10.1016/s0026-2714(01)00203-7
Published: 2001-09
Container: Microelectronics Reliability
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0026-2714-01-00203-7,
  title = {Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications},
  author = {N. Revil and X. Garros},
  year = {2001},
  journal = {Microelectronics Reliability},
  doi = {10.1016/s0026-2714(01)00203-7},
  url = {https://doi.org/10.1016/s0026-2714(01)00203-7}
}

RIS

TY  - JOUR
TI  - Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications
AU  - N. Revil
AU  - X. Garros
PY  - 2001
JO  - Microelectronics Reliability
DO  - 10.1016/s0026-2714(01)00203-7
UR  - https://doi.org/10.1016/s0026-2714(01)00203-7
ER  -

APA

Revil, N., & Garros, X. (2001). Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications. Microelectronics Reliability. https://doi.org/10.1016/s0026-2714(01)00203-7

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crossref · retrieved 2026-11-10T16:30:02.768Z