Lifetime prediction for PMOS and NMOS devices based on a degradation model for ate-ias-tress

A. Narr, A. Lill

Open source

DOI: 10.1016/s0026-2714(97)00080-2
Published: 1997-10
Container: Microelectronics Reliability
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0026-2714-97-00080-2,
  title = {Lifetime prediction for PMOS and NMOS devices based on a degradation model for ate-ias-tress},
  author = {A. Narr and A. Lill},
  year = {1997},
  journal = {Microelectronics Reliability},
  doi = {10.1016/s0026-2714(97)00080-2},
  url = {https://doi.org/10.1016/s0026-2714(97)00080-2}
}

RIS

TY  - JOUR
TI  - Lifetime prediction for PMOS and NMOS devices based on a degradation model for ate-ias-tress
AU  - A. Narr
AU  - A. Lill
PY  - 1997
JO  - Microelectronics Reliability
DO  - 10.1016/s0026-2714(97)00080-2
UR  - https://doi.org/10.1016/s0026-2714(97)00080-2
ER  -

APA

Narr, A., & Lill, A. (1997). Lifetime prediction for PMOS and NMOS devices based on a degradation model for ate-ias-tress. Microelectronics Reliability. https://doi.org/10.1016/s0026-2714(97)00080-2

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crossref · retrieved 2026-09-26T03:06:55.765Z