Investigation of the influence of ramped voltage stress on intrinsic tbd of MOS gate oxides

A Martin, P O'Sullivan, A Mathewson, J.S Suehle, P Chaparala

Open source

DOI: 10.1016/s0038-1101(97)00015-4
Published: 1997-07
Container: Solid-State Electronics
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0038-1101-97-00015-4,
  title = {Investigation of the influence of ramped voltage stress on intrinsic tbd of MOS gate oxides},
  author = {A Martin and P O'Sullivan and A Mathewson and J.S Suehle and P Chaparala},
  year = {1997},
  journal = {Solid-State Electronics},
  doi = {10.1016/s0038-1101(97)00015-4},
  url = {https://doi.org/10.1016/s0038-1101(97)00015-4}
}

RIS

TY  - JOUR
TI  - Investigation of the influence of ramped voltage stress on intrinsic tbd of MOS gate oxides
AU  - A Martin
AU  - P O'Sullivan
AU  - A Mathewson
AU  - J.S Suehle
AU  - P Chaparala
PY  - 1997
JO  - Solid-State Electronics
DO  - 10.1016/s0038-1101(97)00015-4
UR  - https://doi.org/10.1016/s0038-1101(97)00015-4
ER  -

APA

Martin, A., O'Sullivan, P., Mathewson, A., Suehle, J., & Chaparala, P. (1997). Investigation of the influence of ramped voltage stress on intrinsic tbd of MOS gate oxides. Solid-State Electronics. https://doi.org/10.1016/s0038-1101(97)00015-4

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crossref · retrieved 2026-09-27T10:03:53.142Z