Formation of WSi-based ohmic contacts to n-type GaAs

Takeo Oku, Masaki Furumai, Chihiro J. Uchibori, Masanori Murakami

Open source

DOI: 10.1016/s0040-6090(96)09511-9
Published: 1997-05
Container: Thin Solid Films
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0040-6090-96-09511-9,
  title = {Formation of WSi-based ohmic contacts to n-type GaAs},
  author = {Takeo Oku and Masaki Furumai and Chihiro J. Uchibori and Masanori Murakami},
  year = {1997},
  journal = {Thin Solid Films},
  doi = {10.1016/s0040-6090(96)09511-9},
  url = {https://doi.org/10.1016/s0040-6090(96)09511-9}
}

RIS

TY  - JOUR
TI  - Formation of WSi-based ohmic contacts to n-type GaAs
AU  - Takeo Oku
AU  - Masaki Furumai
AU  - Chihiro J. Uchibori
AU  - Masanori Murakami
PY  - 1997
JO  - Thin Solid Films
DO  - 10.1016/s0040-6090(96)09511-9
UR  - https://doi.org/10.1016/s0040-6090(96)09511-9
ER  -

APA

Oku, T., Furumai, M., Uchibori, C. J., & Murakami, M. (1997). Formation of WSi-based ohmic contacts to n-type GaAs. Thin Solid Films. https://doi.org/10.1016/s0040-6090(96)09511-9

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crossref · retrieved 2026-09-27T15:32:37.398Z