The preparation, characterization of amorphous Cu–TCNQ film with a low degree of charge-transfer (DCT) and its electric switching properties

Shuqing Sun, Peiji Wu, Daoben Zhu

Open source

DOI: 10.1016/s0040-6090(96)09571-5
Published: 1997-06
Container: Thin Solid Films
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0040-6090-96-09571-5,
  title = {The preparation, characterization of amorphous Cu–TCNQ film with a low degree of charge-transfer (DCT) and its electric switching properties},
  author = {Shuqing Sun and Peiji Wu and Daoben Zhu},
  year = {1997},
  journal = {Thin Solid Films},
  doi = {10.1016/s0040-6090(96)09571-5},
  url = {https://doi.org/10.1016/s0040-6090(96)09571-5}
}

RIS

TY  - JOUR
TI  - The preparation, characterization of amorphous Cu–TCNQ film with a low degree of charge-transfer (DCT) and its electric switching properties
AU  - Shuqing Sun
AU  - Peiji Wu
AU  - Daoben Zhu
PY  - 1997
JO  - Thin Solid Films
DO  - 10.1016/s0040-6090(96)09571-5
UR  - https://doi.org/10.1016/s0040-6090(96)09571-5
ER  -

APA

Sun, S., Wu, P., & Zhu, D. (1997). The preparation, characterization of amorphous Cu–TCNQ film with a low degree of charge-transfer (DCT) and its electric switching properties. Thin Solid Films. https://doi.org/10.1016/s0040-6090(96)09571-5

Source records

crossref · retrieved 2026-09-25T10:58:54.861Z