Ga+ ion irradiated a-As2S3 layers

R Stoycheva-Topalova, J Assa, A Buroff, T Tzvetkov, S Necheva, N Drandarov

Open source

DOI: 10.1016/s0042-207x(00)00204-9
Published: 2000-08
Container: Vacuum
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0042-207x-00-00204-9,
  title = {Ga+ ion irradiated a-As2S3 layers},
  author = {R Stoycheva-Topalova and J Assa and A Buroff and T Tzvetkov and S Necheva and N Drandarov},
  year = {2000},
  journal = {Vacuum},
  doi = {10.1016/s0042-207x(00)00204-9},
  url = {https://doi.org/10.1016/s0042-207x(00)00204-9}
}

RIS

TY  - JOUR
TI  - Ga+ ion irradiated a-As2S3 layers
AU  - R Stoycheva-Topalova
AU  - J Assa
AU  - A Buroff
AU  - T Tzvetkov
AU  - S Necheva
AU  - N Drandarov
PY  - 2000
JO  - Vacuum
DO  - 10.1016/s0042-207x(00)00204-9
UR  - https://doi.org/10.1016/s0042-207x(00)00204-9
ER  -

APA

Stoycheva-Topalova, R., Assa, J., Buroff, A., Tzvetkov, T., Necheva, S., & Drandarov, N. (2000). Ga+ ion irradiated a-As2S3 layers. Vacuum. https://doi.org/10.1016/s0042-207x(00)00204-9

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crossref · retrieved 2026-09-26T06:09:40.435Z