Do dopant diffusion and drift decide semiconductor device degradation and dimension limits?

I Lubomirsky

Open source

DOI: 10.1016/s0167-2738(00)00414-8
Published: 2000-11-02
Container: Solid State Ionics
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0167-2738-00-00414-8,
  title = {Do dopant diffusion and drift decide semiconductor device degradation and dimension limits?},
  author = {I Lubomirsky},
  year = {2000},
  journal = {Solid State Ionics},
  doi = {10.1016/s0167-2738(00)00414-8},
  url = {https://doi.org/10.1016/s0167-2738(00)00414-8}
}

RIS

TY  - JOUR
TI  - Do dopant diffusion and drift decide semiconductor device degradation and dimension limits?
AU  - I Lubomirsky
PY  - 2000
JO  - Solid State Ionics
DO  - 10.1016/s0167-2738(00)00414-8
UR  - https://doi.org/10.1016/s0167-2738(00)00414-8
ER  -

APA

Lubomirsky, I. (2000). Do dopant diffusion and drift decide semiconductor device degradation and dimension limits?. Solid State Ionics. https://doi.org/10.1016/s0167-2738(00)00414-8

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crossref · retrieved 2026-09-26T14:35:37.910Z