Electronic transport in Ru–Si–O and Ir–Si–O amorphous thin films

U. Gottlieb, O. Laborde, P.H. Giauque, M.-A. Nicolet, R. Madar

Open source

DOI: 10.1016/s0167-9317(01)00683-9
Published: 2002-01
Container: Microelectronic Engineering
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0167-9317-01-00683-9,
  title = {Electronic transport in Ru–Si–O and Ir–Si–O amorphous thin films},
  author = {U. Gottlieb and O. Laborde and P.H. Giauque and M.-A. Nicolet and R. Madar},
  year = {2002},
  journal = {Microelectronic Engineering},
  doi = {10.1016/s0167-9317(01)00683-9},
  url = {https://doi.org/10.1016/s0167-9317(01)00683-9}
}

RIS

TY  - JOUR
TI  - Electronic transport in Ru–Si–O and Ir–Si–O amorphous thin films
AU  - U. Gottlieb
AU  - O. Laborde
AU  - P.H. Giauque
AU  - M.-A. Nicolet
AU  - R. Madar
PY  - 2002
JO  - Microelectronic Engineering
DO  - 10.1016/s0167-9317(01)00683-9
UR  - https://doi.org/10.1016/s0167-9317(01)00683-9
ER  -

APA

Gottlieb, U., Laborde, O., Giauque, P., Nicolet, M., & Madar, R. (2002). Electronic transport in Ru–Si–O and Ir–Si–O amorphous thin films. Microelectronic Engineering. https://doi.org/10.1016/s0167-9317(01)00683-9

Source records

crossref · retrieved 2026-09-26T13:53:56.312Z