Use of carbon-free Ta2O5 thin-films as a gate insulator

R.A.B. Devine, C. Chaneliere, J.L. Autran, B. Balland, P. Paillet, J.L. Leray

Open source

DOI: 10.1016/s0167-9317(97)00015-4
Published: 1997-06
Container: Microelectronic Engineering
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0167-9317-97-00015-4,
  title = {Use of carbon-free Ta2O5 thin-films as a gate insulator},
  author = {R.A.B. Devine and C. Chaneliere and J.L. Autran and B. Balland and P. Paillet and J.L. Leray},
  year = {1997},
  journal = {Microelectronic Engineering},
  doi = {10.1016/s0167-9317(97)00015-4},
  url = {https://doi.org/10.1016/s0167-9317(97)00015-4}
}

RIS

TY  - JOUR
TI  - Use of carbon-free Ta2O5 thin-films as a gate insulator
AU  - R.A.B. Devine
AU  - C. Chaneliere
AU  - J.L. Autran
AU  - B. Balland
AU  - P. Paillet
AU  - J.L. Leray
PY  - 1997
JO  - Microelectronic Engineering
DO  - 10.1016/s0167-9317(97)00015-4
UR  - https://doi.org/10.1016/s0167-9317(97)00015-4
ER  -

APA

Devine, R., Chaneliere, C., Autran, J., Balland, B., Paillet, P., & Leray, J. (1997). Use of carbon-free Ta2O5 thin-films as a gate insulator. Microelectronic Engineering. https://doi.org/10.1016/s0167-9317(97)00015-4

Source records

crossref · retrieved 2026-11-10T16:35:55.339Z