Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs
- DOI
- 10.1016/s0167-9317(98)00196-8
- Published
- 1998-08
- Container
- Microelectronic Engineering
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/s0167-9317-98-00196-8,
title = {Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs},
author = {S Sanguinetti and S.C Fortina and E Grilli and M Guzzi and M Henini and M.D Upward and P Moriarty and P.H Beton and L Eaves},
year = {1998},
journal = {Microelectronic Engineering},
doi = {10.1016/s0167-9317(98)00196-8},
url = {https://doi.org/10.1016/s0167-9317(98)00196-8}
}RIS
TY - JOUR TI - Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs AU - S Sanguinetti AU - S.C Fortina AU - E Grilli AU - M Guzzi AU - M Henini AU - M.D Upward AU - P Moriarty AU - P.H Beton AU - L Eaves PY - 1998 JO - Microelectronic Engineering DO - 10.1016/s0167-9317(98)00196-8 UR - https://doi.org/10.1016/s0167-9317(98)00196-8 ER -
APA
Sanguinetti, S., Fortina, S., Grilli, E., Guzzi, M., Henini, M., Upward, M., Moriarty, P., Beton, P., & Eaves, L. (1998). Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs. Microelectronic Engineering. https://doi.org/10.1016/s0167-9317(98)00196-8
Source records
- crossref · retrieved 2026-09-27T04:07:23.825Z