Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs

S Sanguinetti, S.C Fortina, E Grilli, M Guzzi, M Henini, M.D Upward, P Moriarty, P.H Beton, L Eaves

Open source

DOI
10.1016/s0167-9317(98)00196-8
Published
1998-08
Container
Microelectronic Engineering
Publisher
Elsevier BV
Open access
unknown

Credibility signals

uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1016/s0167-9317-98-00196-8,
  title = {Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs},
  author = {S Sanguinetti and S.C Fortina and E Grilli and M Guzzi and M Henini and M.D Upward and P Moriarty and P.H Beton and L Eaves},
  year = {1998},
  journal = {Microelectronic Engineering},
  doi = {10.1016/s0167-9317(98)00196-8},
  url = {https://doi.org/10.1016/s0167-9317(98)00196-8}
}

RIS

TY  - JOUR
TI  - Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs
AU  - S Sanguinetti
AU  - S.C Fortina
AU  - E Grilli
AU  - M Guzzi
AU  - M Henini
AU  - M.D Upward
AU  - P Moriarty
AU  - P.H Beton
AU  - L Eaves
PY  - 1998
JO  - Microelectronic Engineering
DO  - 10.1016/s0167-9317(98)00196-8
UR  - https://doi.org/10.1016/s0167-9317(98)00196-8
ER  - 

APA

Sanguinetti, S., Fortina, S., Grilli, E., Guzzi, M., Henini, M., Upward, M., Moriarty, P., Beton, P., & Eaves, L. (1998). Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs. Microelectronic Engineering. https://doi.org/10.1016/s0167-9317(98)00196-8

Source records