Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices
- DOI
- 10.1016/s0169-4332(00)00332-9
- Published
- 2000-09
- Container
- Applied Surface Science
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/s0169-4332-00-00332-9,
title = {Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices},
author = {T. Baron and F. Martin and P. Mur and C. Wyon and M. Dupuy and C. Busseret and A. Souifi and G. Guillot},
year = {2000},
journal = {Applied Surface Science},
doi = {10.1016/s0169-4332(00)00332-9},
url = {https://doi.org/10.1016/s0169-4332(00)00332-9}
}RIS
TY - JOUR TI - Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices AU - T. Baron AU - F. Martin AU - P. Mur AU - C. Wyon AU - M. Dupuy AU - C. Busseret AU - A. Souifi AU - G. Guillot PY - 2000 JO - Applied Surface Science DO - 10.1016/s0169-4332(00)00332-9 UR - https://doi.org/10.1016/s0169-4332(00)00332-9 ER -
APA
Baron, T., Martin, F., Mur, P., Wyon, C., Dupuy, M., Busseret, C., Souifi, A., & Guillot, G. (2000). Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices. Applied Surface Science. https://doi.org/10.1016/s0169-4332(00)00332-9
Source records
- crossref · retrieved 2026-09-25T17:56:55.207Z