Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation

J. Zhang, K. Sugioka, S. Wada, H. Tashiro, K. Toyoda, K. Midorikawa

Open source

DOI
10.1016/s0169-4332(97)00744-7
Published
1998-05
Container
Applied Surface Science
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/s0169-4332-97-00744-7,
  title = {Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation},
  author = {J. Zhang and K. Sugioka and S. Wada and H. Tashiro and K. Toyoda and K. Midorikawa},
  year = {1998},
  journal = {Applied Surface Science},
  doi = {10.1016/s0169-4332(97)00744-7},
  url = {https://doi.org/10.1016/s0169-4332(97)00744-7}
}

RIS

TY  - JOUR
TI  - Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation
AU  - J. Zhang
AU  - K. Sugioka
AU  - S. Wada
AU  - H. Tashiro
AU  - K. Toyoda
AU  - K. Midorikawa
PY  - 1998
JO  - Applied Surface Science
DO  - 10.1016/s0169-4332(97)00744-7
UR  - https://doi.org/10.1016/s0169-4332(97)00744-7
ER  - 

APA

Zhang, J., Sugioka, K., Wada, S., Tashiro, H., Toyoda, K., & Midorikawa, K. (1998). Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation. Applied Surface Science. https://doi.org/10.1016/s0169-4332(97)00744-7

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