Study of the initial stages of TiO2 growth on Si wafers by XPS

Y. Leprince-Wang

Open source

DOI: 10.1016/s0257-8972(01)01541-9
Published: 2002-02
Container: Surface and Coatings Technology
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0257-8972-01-01541-9,
  title = {Study of the initial stages of TiO2 growth on Si wafers by XPS},
  author = {Y. Leprince-Wang},
  year = {2002},
  journal = {Surface and Coatings Technology},
  doi = {10.1016/s0257-8972(01)01541-9},
  url = {https://doi.org/10.1016/s0257-8972(01)01541-9}
}

RIS

TY  - JOUR
TI  - Study of the initial stages of TiO2 growth on Si wafers by XPS
AU  - Y. Leprince-Wang
PY  - 2002
JO  - Surface and Coatings Technology
DO  - 10.1016/s0257-8972(01)01541-9
UR  - https://doi.org/10.1016/s0257-8972(01)01541-9
ER  -

APA

Leprince-Wang, Y. (2002). Study of the initial stages of TiO2 growth on Si wafers by XPS. Surface and Coatings Technology. https://doi.org/10.1016/s0257-8972(01)01541-9

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crossref · retrieved 2026-11-10T13:44:38.013Z