Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

J.G. Park, G.T. Kim, V. Krstic, S.H. Lee, B. Kim, S. Roth, M. Burghard, Y.W. Park

Open source

DOI
10.1016/s0379-6779(00)00744-x
Published
2001-03
Container
Synthetic Metals
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/s0379-6779-00-00744-x,
  title = {Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers},
  author = {J.G. Park and G.T. Kim and V. Krstic and S.H. Lee and B. Kim and S. Roth and M. Burghard and Y.W. Park},
  year = {2001},
  journal = {Synthetic Metals},
  doi = {10.1016/s0379-6779(00)00744-x},
  url = {https://doi.org/10.1016/s0379-6779(00)00744-x}
}

RIS

TY  - JOUR
TI  - Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers
AU  - J.G. Park
AU  - G.T. Kim
AU  - V. Krstic
AU  - S.H. Lee
AU  - B. Kim
AU  - S. Roth
AU  - M. Burghard
AU  - Y.W. Park
PY  - 2001
JO  - Synthetic Metals
DO  - 10.1016/s0379-6779(00)00744-x
UR  - https://doi.org/10.1016/s0379-6779(00)00744-x
ER  - 

APA

Park, J., Kim, G., Krstic, V., Lee, S., Kim, B., Roth, S., Burghard, M., & Park, Y. (2001). Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers. Synthetic Metals. https://doi.org/10.1016/s0379-6779(00)00744-x

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