As antisite incorporation in epitaxial growth of GaAs
- DOI
- 10.1016/s0921-4526(99)00622-5
- Published
- 1999-12
- Container
- Physica B: Condensed Matter
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/s0921-4526-99-00622-5,
title = {As antisite incorporation in epitaxial growth of GaAs},
author = {J.C Bourgoin and H Hammadi and M Stellmacher and J Nagle and B Grandidier and D Stievenard and J.P Nys and C Delerue and M Lannoo},
year = {1999},
journal = {Physica B: Condensed Matter},
doi = {10.1016/s0921-4526(99)00622-5},
url = {https://doi.org/10.1016/s0921-4526(99)00622-5}
}RIS
TY - JOUR TI - As antisite incorporation in epitaxial growth of GaAs AU - J.C Bourgoin AU - H Hammadi AU - M Stellmacher AU - J Nagle AU - B Grandidier AU - D Stievenard AU - J.P Nys AU - C Delerue AU - M Lannoo PY - 1999 JO - Physica B: Condensed Matter DO - 10.1016/s0921-4526(99)00622-5 UR - https://doi.org/10.1016/s0921-4526(99)00622-5 ER -
APA
Bourgoin, J., Hammadi, H., Stellmacher, M., Nagle, J., Grandidier, B., Stievenard, D., Nys, J., Delerue, C., & Lannoo, M. (1999). As antisite incorporation in epitaxial growth of GaAs. Physica B: Condensed Matter. https://doi.org/10.1016/s0921-4526(99)00622-5
Source records
- crossref · retrieved 2026-09-27T01:32:29.480Z