RETRACTED: Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

L.S. Wang, W.H. Sun, S.J. Chua, Mark Johnson

DOI: 10.1016/s0921-5107(02)00572-x
Published: 2003-01
Container: Materials Science and Engineering: B
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0921-5107-02-00572-x,
  title = {RETRACTED: Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells},
  author = {L.S. Wang and W.H. Sun and S.J. Chua and Mark Johnson},
  year = {2003},
  journal = {Materials Science and Engineering: B},
  doi = {10.1016/s0921-5107(02)00572-x},
  url = {https://doi.org/10.1016/s0921-5107(02)00572-x}
}

RIS

TY  - JOUR
TI  - RETRACTED: Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells
AU  - L.S. Wang
AU  - W.H. Sun
AU  - S.J. Chua
AU  - Mark Johnson
PY  - 2003
JO  - Materials Science and Engineering: B
DO  - 10.1016/s0921-5107(02)00572-x
UR  - https://doi.org/10.1016/s0921-5107(02)00572-x
ER  -

APA

Wang, L., Sun, W., Chua, S., & Johnson, M. (2003). RETRACTED: Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells. Materials Science and Engineering: B. https://doi.org/10.1016/s0921-5107(02)00572-x

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crossref · retrieved 2026-09-26T11:50:15.553Z