Origin of the Q=11 meV bound exciton in GaN

U Kaufmann, C Merz, B Šantic, R Niebuhr, H Obloh, K.H Bachem

Open source

DOI: 10.1016/s0921-5107(97)00146-3
Published: 1997-12
Container: Materials Science and Engineering: B
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0921-5107-97-00146-3,
  title = {Origin of the Q=11 meV bound exciton in GaN},
  author = {U Kaufmann and C Merz and B Šantic and R Niebuhr and H Obloh and K.H Bachem},
  year = {1997},
  journal = {Materials Science and Engineering: B},
  doi = {10.1016/s0921-5107(97)00146-3},
  url = {https://doi.org/10.1016/s0921-5107(97)00146-3}
}

RIS

TY  - JOUR
TI  - Origin of the Q=11 meV bound exciton in GaN
AU  - U Kaufmann
AU  - C Merz
AU  - B Šantic
AU  - R Niebuhr
AU  - H Obloh
AU  - K.H Bachem
PY  - 1997
JO  - Materials Science and Engineering: B
DO  - 10.1016/s0921-5107(97)00146-3
UR  - https://doi.org/10.1016/s0921-5107(97)00146-3
ER  -

APA

Kaufmann, U., Merz, C., Šantic, B., Niebuhr, R., Obloh, H., & Bachem, K. (1997). Origin of the Q=11 meV bound exciton in GaN. Materials Science and Engineering: B. https://doi.org/10.1016/s0921-5107(97)00146-3

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crossref · retrieved 2026-09-26T15:59:02.500Z