More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution

Y Ziegler, V Daudrix, C Droz, R Platz, N Wyrsch, A Shah

Open source

DOI
10.1016/s0927-0248(00)00202-6
Published
2001-02
Container
Solar Energy Materials and Solar Cells
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/s0927-0248-00-00202-6,
  title = {More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution},
  author = {Y Ziegler and V Daudrix and C Droz and R Platz and N Wyrsch and A Shah},
  year = {2001},
  journal = {Solar Energy Materials and Solar Cells},
  doi = {10.1016/s0927-0248(00)00202-6},
  url = {https://doi.org/10.1016/s0927-0248(00)00202-6}
}

RIS

TY  - JOUR
TI  - More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution
AU  - Y Ziegler
AU  - V Daudrix
AU  - C Droz
AU  - R Platz
AU  - N Wyrsch
AU  - A Shah
PY  - 2001
JO  - Solar Energy Materials and Solar Cells
DO  - 10.1016/s0927-0248(00)00202-6
UR  - https://doi.org/10.1016/s0927-0248(00)00202-6
ER  - 

APA

Ziegler, Y., Daudrix, V., Droz, C., Platz, R., Wyrsch, N., & Shah, A. (2001). More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution. Solar Energy Materials and Solar Cells. https://doi.org/10.1016/s0927-0248(00)00202-6

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