More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution
- DOI
- 10.1016/s0927-0248(00)00202-6
- Published
- 2001-02
- Container
- Solar Energy Materials and Solar Cells
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/s0927-0248-00-00202-6,
title = {More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution},
author = {Y Ziegler and V Daudrix and C Droz and R Platz and N Wyrsch and A Shah},
year = {2001},
journal = {Solar Energy Materials and Solar Cells},
doi = {10.1016/s0927-0248(00)00202-6},
url = {https://doi.org/10.1016/s0927-0248(00)00202-6}
}RIS
TY - JOUR TI - More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution AU - Y Ziegler AU - V Daudrix AU - C Droz AU - R Platz AU - N Wyrsch AU - A Shah PY - 2001 JO - Solar Energy Materials and Solar Cells DO - 10.1016/s0927-0248(00)00202-6 UR - https://doi.org/10.1016/s0927-0248(00)00202-6 ER -
APA
Ziegler, Y., Daudrix, V., Droz, C., Platz, R., Wyrsch, N., & Shah, A. (2001). More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution. Solar Energy Materials and Solar Cells. https://doi.org/10.1016/s0927-0248(00)00202-6
Source records
- crossref · retrieved 2026-09-25T21:30:36.020Z