Influence of the sulfur vacancies on the electronic properties of In16Sn4S32

Rémi Dedryvère, P.E. Lippens, J.C. Jumas, I. Lefebvre-Devos, C. Pérez Vicente

DOI: 10.1016/s1293-2558(00)01137-7
Published: 2001
Container: Solid State Sciences
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1016/s1293-2558-00-01137-7,
  title = {Influence of the sulfur vacancies on the electronic properties of In16Sn4S32},
  author = {Rémi Dedryvère and P.E. Lippens and J.C. Jumas and I. Lefebvre-Devos and C. Pérez Vicente},
  year = {2001},
  journal = {Solid State Sciences},
  doi = {10.1016/s1293-2558(00)01137-7},
  url = {https://doi.org/10.1016/s1293-2558(00)01137-7}
}

RIS

TY  - JOUR
TI  - Influence of the sulfur vacancies on the electronic properties of In16Sn4S32
AU  - Rémi Dedryvère
AU  - P.E. Lippens
AU  - J.C. Jumas
AU  - I. Lefebvre-Devos
AU  - C. Pérez Vicente
PY  - 2001
JO  - Solid State Sciences
DO  - 10.1016/s1293-2558(00)01137-7
UR  - https://doi.org/10.1016/s1293-2558(00)01137-7
ER  -

APA

Dedryvère, R., Lippens, P., Jumas, J., Lefebvre-Devos, I., & Vicente, C. P. (2001). Influence of the sulfur vacancies on the electronic properties of In16Sn4S32. Solid State Sciences. https://doi.org/10.1016/s1293-2558(00)01137-7

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hal · retrieved 2026-09-27T13:21:31.832Z