Stress effects on defects and dopant diffusion in Si

Michael J. Aziz

Open source

DOI: 10.1016/s1369-8001(01)00014-2
Published: 2001-10
Container: Materials Science in Semiconductor Processing
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s1369-8001-01-00014-2,
  title = {Stress effects on defects and dopant diffusion in Si},
  author = {Michael J. Aziz},
  year = {2001},
  journal = {Materials Science in Semiconductor Processing},
  doi = {10.1016/s1369-8001(01)00014-2},
  url = {https://doi.org/10.1016/s1369-8001(01)00014-2}
}

RIS

TY  - JOUR
TI  - Stress effects on defects and dopant diffusion in Si
AU  - Michael J. Aziz
PY  - 2001
JO  - Materials Science in Semiconductor Processing
DO  - 10.1016/s1369-8001(01)00014-2
UR  - https://doi.org/10.1016/s1369-8001(01)00014-2
ER  -

APA

Aziz, M. J. (2001). Stress effects on defects and dopant diffusion in Si. Materials Science in Semiconductor Processing. https://doi.org/10.1016/s1369-8001(01)00014-2

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crossref · retrieved 2026-11-04T22:18:11.465Z