Improvement in electrical properties of SOI-SIMNI films by multiple-step implantation

Dian-Tong Lu, Heiner Ryssel

Open source

DOI: 10.1016/s1567-1739(01)00041-4
Published: 2001-11
Container: Current Applied Physics
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s1567-1739-01-00041-4,
  title = {Improvement in electrical properties of SOI-SIMNI films by multiple-step implantation},
  author = {Dian-Tong Lu and Heiner Ryssel},
  year = {2001},
  journal = {Current Applied Physics},
  doi = {10.1016/s1567-1739(01)00041-4},
  url = {https://doi.org/10.1016/s1567-1739(01)00041-4}
}

RIS

TY  - JOUR
TI  - Improvement in electrical properties of SOI-SIMNI films by multiple-step implantation
AU  - Dian-Tong Lu
AU  - Heiner Ryssel
PY  - 2001
JO  - Current Applied Physics
DO  - 10.1016/s1567-1739(01)00041-4
UR  - https://doi.org/10.1016/s1567-1739(01)00041-4
ER  -

APA

Lu, D., & Ryssel, H. (2001). Improvement in electrical properties of SOI-SIMNI films by multiple-step implantation. Current Applied Physics. https://doi.org/10.1016/s1567-1739(01)00041-4

Source records

crossref · retrieved 2026-09-26T20:52:05.761Z