A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement

Pierre Medrel, Audrey Martin, Tibault Reveyrand, Guillaume Neveux, Denis Barataud, Philippe Bouysse, Jean-Michel Nebus, Luc Lapierre, Jean-François Villemazet

Open source

DOI: 10.1017/s1759078713000962
Published: 2013-11-29
Container: International Journal of Microwave and Wireless Technologies
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1017/s1759078713000962,
  title = {A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement},
  author = {Pierre Medrel and Audrey Martin and Tibault Reveyrand and Guillaume Neveux and Denis Barataud and Philippe Bouysse and Jean-Michel Nebus and Luc Lapierre and Jean-François Villemazet},
  year = {2013},
  journal = {International Journal of Microwave and Wireless Technologies},
  doi = {10.1017/s1759078713000962},
  url = {https://doi.org/10.1017/s1759078713000962}
}

RIS

TY  - JOUR
TI  - A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement
AU  - Pierre Medrel
AU  - Audrey Martin
AU  - Tibault Reveyrand
AU  - Guillaume Neveux
AU  - Denis Barataud
AU  - Philippe Bouysse
AU  - Jean-Michel Nebus
AU  - Luc Lapierre
AU  - Jean-François Villemazet
PY  - 2013
JO  - International Journal of Microwave and Wireless Technologies
DO  - 10.1017/s1759078713000962
UR  - https://doi.org/10.1017/s1759078713000962
ER  -

APA

Medrel, P., Martin, A., Reveyrand, T., Neveux, G., Barataud, D., Bouysse, P., Nebus, J., Lapierre, L., & Villemazet, J. (2013). A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement. International Journal of Microwave and Wireless Technologies. https://doi.org/10.1017/s1759078713000962

Source records

hal · retrieved 2026-11-10T11:23:34.164Z