Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)

Dinesh Baral, Nirosh M. Eldose, Diandian Zhang, Hryhorii Stanchu, Fernando Maia de Oliveira, Serhii Kryvyi, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Wei Du, Shui-Qing Yu, Gregory J. Salamo

Open source

DOI
10.1021/acs.cgd.6c00174
Published
2026-06-11
Container
Crystal Growth &amp; Design
Publisher
American Chemical Society (ACS)
Open access
unknown

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BibTeX

@article{allodium:10.1021/acs.cgd.6c00174,
  title = {Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge
                    <sub>0.85</sub>
                    Sn
                    <sub>0.15</sub>
                    on Ge(001)},
  author = {Dinesh Baral and Nirosh M. Eldose and Diandian Zhang and Hryhorii Stanchu and Fernando Maia de Oliveira and Serhii Kryvyi and Mohammad Zamani-Alavijeh and Mourad Benamara and Yuriy I. Mazur and Wei Du and Shui-Qing Yu and Gregory J. Salamo},
  year = {2026},
  journal = {Crystal Growth \&amp; Design},
  doi = {10.1021/acs.cgd.6c00174},
  url = {https://doi.org/10.1021/acs.cgd.6c00174}
}

RIS

TY  - JOUR
TI  - Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge
                    <sub>0.85</sub>
                    Sn
                    <sub>0.15</sub>
                    on Ge(001)
AU  - Dinesh Baral
AU  - Nirosh M. Eldose
AU  - Diandian Zhang
AU  - Hryhorii Stanchu
AU  - Fernando Maia de Oliveira
AU  - Serhii Kryvyi
AU  - Mohammad Zamani-Alavijeh
AU  - Mourad Benamara
AU  - Yuriy I. Mazur
AU  - Wei Du
AU  - Shui-Qing Yu
AU  - Gregory J. Salamo
PY  - 2026
JO  - Crystal Growth &amp; Design
DO  - 10.1021/acs.cgd.6c00174
UR  - https://doi.org/10.1021/acs.cgd.6c00174
ER  - 

APA

Baral, D., Eldose, N. M., Zhang, D., Stanchu, H., Oliveira, F. M. D., Kryvyi, S., Zamani-Alavijeh, M., Benamara, M., Mazur, Y. I., Du, W., Yu, S., & Salamo, G. J. (2026). Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001). Crystal Growth &amp; Design. https://doi.org/10.1021/acs.cgd.6c00174

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