Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
- DOI
- 10.1021/acs.cgd.6c00174
- Published
- 2026-06-11
- Container
- Crystal Growth & Design
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.cgd.6c00174,
title = {Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge
<sub>0.85</sub>
Sn
<sub>0.15</sub>
on Ge(001)},
author = {Dinesh Baral and Nirosh M. Eldose and Diandian Zhang and Hryhorii Stanchu and Fernando Maia de Oliveira and Serhii Kryvyi and Mohammad Zamani-Alavijeh and Mourad Benamara and Yuriy I. Mazur and Wei Du and Shui-Qing Yu and Gregory J. Salamo},
year = {2026},
journal = {Crystal Growth \& Design},
doi = {10.1021/acs.cgd.6c00174},
url = {https://doi.org/10.1021/acs.cgd.6c00174}
}RIS
TY - JOUR
TI - Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge
<sub>0.85</sub>
Sn
<sub>0.15</sub>
on Ge(001)
AU - Dinesh Baral
AU - Nirosh M. Eldose
AU - Diandian Zhang
AU - Hryhorii Stanchu
AU - Fernando Maia de Oliveira
AU - Serhii Kryvyi
AU - Mohammad Zamani-Alavijeh
AU - Mourad Benamara
AU - Yuriy I. Mazur
AU - Wei Du
AU - Shui-Qing Yu
AU - Gregory J. Salamo
PY - 2026
JO - Crystal Growth & Design
DO - 10.1021/acs.cgd.6c00174
UR - https://doi.org/10.1021/acs.cgd.6c00174
ER - APA
Baral, D., Eldose, N. M., Zhang, D., Stanchu, H., Oliveira, F. M. D., Kryvyi, S., Zamani-Alavijeh, M., Benamara, M., Mazur, Y. I., Du, W., Yu, S., & Salamo, G. J. (2026). Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001). Crystal Growth & Design. https://doi.org/10.1021/acs.cgd.6c00174
Source records
- crossref · retrieved 2026-09-26T07:53:03.544Z