Heteroepitaxial Growth of GaAs on Ge(111) and Ge(100) by MOCVD.

Smith TR, Mafi A, Liao C, Bierer SE, McDermott SW, Lewis RB

DOI: 10.1021/acs.cgd.6c00389
Published: 2026 Aug 5
Container: Crystal growth & design
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1021/acs.cgd.6c00389,
  title = {Heteroepitaxial Growth of GaAs on Ge(111) and Ge(100) by MOCVD.},
  author = {Smith TR and Mafi A and Liao C and Bierer SE and McDermott SW and Lewis RB},
  year = {2026},
  journal = {Crystal growth \& design},
  doi = {10.1021/acs.cgd.6c00389},
  url = {https://doi.org/10.1021/acs.cgd.6c00389}
}

RIS

TY  - JOUR
TI  - Heteroepitaxial Growth of GaAs on Ge(111) and Ge(100) by MOCVD.
AU  - Smith TR
AU  - Mafi A
AU  - Liao C
AU  - Bierer SE
AU  - McDermott SW
AU  - Lewis RB
PY  - 2026
JO  - Crystal growth & design
DO  - 10.1021/acs.cgd.6c00389
UR  - https://doi.org/10.1021/acs.cgd.6c00389
ER  -

APA

TR, S., A, M., C, L., SE, B., SW, M., & RB, L. (2026). Heteroepitaxial Growth of GaAs on Ge(111) and Ge(100) by MOCVD.. Crystal growth & design. https://doi.org/10.1021/acs.cgd.6c00389

Source records

pubmed · retrieved 2026-09-25T17:47:36.216Z