Investigations of Defect Physics and Quenching Effect for Optimizing n-type Carrier Concentration in CuWO(4) Photocatalyst.

Ling S, Qu P, Jiang S, Feng Z, Kong B, Wang W

Open source

DOI
10.1021/acs.inorgchem.5c05718
Published
2026 Mar 2
Container
Inorganic chemistry
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1021/acs.inorgchem.5c05718,
  title = {Investigations of Defect Physics and Quenching Effect for Optimizing n-type Carrier Concentration in CuWO(4) Photocatalyst.},
  author = {Ling S and Qu P and Jiang S and Feng Z and Kong B and Wang W},
  year = {2026},
  journal = {Inorganic chemistry},
  doi = {10.1021/acs.inorgchem.5c05718},
  url = {https://doi.org/10.1021/acs.inorgchem.5c05718}
}

RIS

TY  - JOUR
TI  - Investigations of Defect Physics and Quenching Effect for Optimizing n-type Carrier Concentration in CuWO(4) Photocatalyst.
AU  - Ling S
AU  - Qu P
AU  - Jiang S
AU  - Feng Z
AU  - Kong B
AU  - Wang W
PY  - 2026
JO  - Inorganic chemistry
DO  - 10.1021/acs.inorgchem.5c05718
UR  - https://doi.org/10.1021/acs.inorgchem.5c05718
ER  - 

APA

S, L., P, Q., S, J., Z, F., B, K., & W, W. (2026). Investigations of Defect Physics and Quenching Effect for Optimizing n-type Carrier Concentration in CuWO(4) Photocatalyst.. Inorganic chemistry. https://doi.org/10.1021/acs.inorgchem.5c05718

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