Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO(2)N.

Palummo M, Re Fiorentin M, Yamashita K, Castelli IE, Giorgi G

DOI: 10.1021/acs.jpclett.3c00211
Published: 2023 Feb 16
Container: The journal of physical chemistry letters
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1021/acs.jpclett.3c00211,
  title = {Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO(2)N.},
  author = {Palummo M and Re Fiorentin M and Yamashita K and Castelli IE and Giorgi G},
  year = {2023},
  journal = {The journal of physical chemistry letters},
  doi = {10.1021/acs.jpclett.3c00211},
  url = {https://doi.org/10.1021/acs.jpclett.3c00211}
}

RIS

TY  - JOUR
TI  - Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO(2)N.
AU  - Palummo M
AU  - Re Fiorentin M
AU  - Yamashita K
AU  - Castelli IE
AU  - Giorgi G
PY  - 2023
JO  - The journal of physical chemistry letters
DO  - 10.1021/acs.jpclett.3c00211
UR  - https://doi.org/10.1021/acs.jpclett.3c00211
ER  -

APA

M, P., M, R. F., K, Y., IE, C., & G, G. (2023). Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO(2)N.. The journal of physical chemistry letters. https://doi.org/10.1021/acs.jpclett.3c00211

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pubmed · retrieved 2026-09-25T20:42:18.061Z