Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice.

Feng Y, Dai Y, Huang B, Ma Y.

DOI: 10.1021/acs.jpclett.4c01479
Published: 2024-06-20
Container: J Phys Chem Lett
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1021/acs.jpclett.4c01479,
  title = {Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice.},
  author = {Feng Y and  Dai Y and  Huang B and  Ma Y.},
  year = {2024},
  journal = {J Phys Chem Lett},
  doi = {10.1021/acs.jpclett.4c01479},
  url = {https://doi.org/10.1021/acs.jpclett.4c01479}
}

RIS

TY  - JOUR
TI  - Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice.
AU  - Feng Y
AU  -  Dai Y
AU  -  Huang B
AU  -  Ma Y.
PY  - 2024
JO  - J Phys Chem Lett
DO  - 10.1021/acs.jpclett.4c01479
UR  - https://doi.org/10.1021/acs.jpclett.4c01479
ER  -

APA

Y, F., Y, D., B, H., & Y., M. (2024). Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice.. J Phys Chem Lett. https://doi.org/10.1021/acs.jpclett.4c01479

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europe-pmc · retrieved 2026-09-26T22:41:24.163Z