Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory Applications.

Ding HR, Zhao TY, Chen NK, Wang BQ, Qin SY, Niu M, Wang SB, Huang YT, Xu M, Li XB

Open source

DOI
10.1021/acs.jpclett.5c03532
Published
2026 Feb 26
Container
The journal of physical chemistry letters
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1021/acs.jpclett.5c03532,
  title = {Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory Applications.},
  author = {Ding HR and Zhao TY and Chen NK and Wang BQ and Qin SY and Niu M and Wang SB and Huang YT and Xu M and Li XB},
  year = {2026},
  journal = {The journal of physical chemistry letters},
  doi = {10.1021/acs.jpclett.5c03532},
  url = {https://doi.org/10.1021/acs.jpclett.5c03532}
}

RIS

TY  - JOUR
TI  - Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory Applications.
AU  - Ding HR
AU  - Zhao TY
AU  - Chen NK
AU  - Wang BQ
AU  - Qin SY
AU  - Niu M
AU  - Wang SB
AU  - Huang YT
AU  - Xu M
AU  - Li XB
PY  - 2026
JO  - The journal of physical chemistry letters
DO  - 10.1021/acs.jpclett.5c03532
UR  - https://doi.org/10.1021/acs.jpclett.5c03532
ER  - 

APA

HR, D., TY, Z., NK, C., BQ, W., SY, Q., M, N., SB, W., YT, H., M, X., & XB, L. (2026). Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory Applications.. The journal of physical chemistry letters. https://doi.org/10.1021/acs.jpclett.5c03532

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