Mechanism of Dipole Moment Effect on the Schottky Barrier at Janus MoSH/MoSiGeN(4) Metal-Semiconductor Interfaces.

Gu W, Lin Y, Jiang Z, Du A

Open source

DOI
10.1021/acs.jpclett.6c01604
Published
2026 Jul 9
Container
The journal of physical chemistry letters
Publisher
Not recorded
Open access
no

Credibility signals

limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1021/acs.jpclett.6c01604,
  title = {Mechanism of Dipole Moment Effect on the Schottky Barrier at Janus MoSH/MoSiGeN(4) Metal-Semiconductor Interfaces.},
  author = {Gu W and Lin Y and Jiang Z and Du A},
  year = {2026},
  journal = {The journal of physical chemistry letters},
  doi = {10.1021/acs.jpclett.6c01604},
  url = {https://doi.org/10.1021/acs.jpclett.6c01604}
}

RIS

TY  - JOUR
TI  - Mechanism of Dipole Moment Effect on the Schottky Barrier at Janus MoSH/MoSiGeN(4) Metal-Semiconductor Interfaces.
AU  - Gu W
AU  - Lin Y
AU  - Jiang Z
AU  - Du A
PY  - 2026
JO  - The journal of physical chemistry letters
DO  - 10.1021/acs.jpclett.6c01604
UR  - https://doi.org/10.1021/acs.jpclett.6c01604
ER  - 

APA

W, G., Y, L., Z, J., & A, D. (2026). Mechanism of Dipole Moment Effect on the Schottky Barrier at Janus MoSH/MoSiGeN(4) Metal-Semiconductor Interfaces.. The journal of physical chemistry letters. https://doi.org/10.1021/acs.jpclett.6c01604

Source records