High-Performance Two-Dimensional van der Waals Enabled Bipolar Junction Transistors with Current Gain Exceeding 103.
- DOI
- 10.1021/acs.jpclett.6c02360
- Published
- 2026 Sep 10
- Container
- The journal of physical chemistry letters
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.jpclett.6c02360,
title = {High-Performance Two-Dimensional van der Waals Enabled Bipolar Junction Transistors with Current Gain Exceeding 103.},
author = {Gao Y and Cai Z and Wang Z and Zhao W and Sun Y},
year = {2026},
journal = {The journal of physical chemistry letters},
doi = {10.1021/acs.jpclett.6c02360},
url = {https://doi.org/10.1021/acs.jpclett.6c02360}
}RIS
TY - JOUR TI - High-Performance Two-Dimensional van der Waals Enabled Bipolar Junction Transistors with Current Gain Exceeding 103. AU - Gao Y AU - Cai Z AU - Wang Z AU - Zhao W AU - Sun Y PY - 2026 JO - The journal of physical chemistry letters DO - 10.1021/acs.jpclett.6c02360 UR - https://doi.org/10.1021/acs.jpclett.6c02360 ER -
APA
Y, G., Z, C., Z, W., W, Z., & Y, S. (2026). High-Performance Two-Dimensional van der Waals Enabled Bipolar Junction Transistors with Current Gain Exceeding 103.. The journal of physical chemistry letters. https://doi.org/10.1021/acs.jpclett.6c02360
Source records
- pubmed · retrieved 2026-09-25T11:31:46.201Z