Lead-Free FABi3I10 Self-Rectifying Memristors for In-Memory Security and Reservoir Computing.
- DOI
- 10.1021/acs.jpclett.6c02651
- Published
- 2026 Sep 24
- Container
- The journal of physical chemistry letters
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.jpclett.6c02651,
title = {Lead-Free FABi3I10 Self-Rectifying Memristors for In-Memory Security and Reservoir Computing.},
author = {Chai T and Han X and Chen L and Pang T and Tang H and Zhang W and Wang Y},
year = {2026},
journal = {The journal of physical chemistry letters},
doi = {10.1021/acs.jpclett.6c02651},
url = {https://doi.org/10.1021/acs.jpclett.6c02651}
}RIS
TY - JOUR TI - Lead-Free FABi3I10 Self-Rectifying Memristors for In-Memory Security and Reservoir Computing. AU - Chai T AU - Han X AU - Chen L AU - Pang T AU - Tang H AU - Zhang W AU - Wang Y PY - 2026 JO - The journal of physical chemistry letters DO - 10.1021/acs.jpclett.6c02651 UR - https://doi.org/10.1021/acs.jpclett.6c02651 ER -
APA
T, C., X, H., L, C., T, P., H, T., W, Z., & Y, W. (2026). Lead-Free FABi3I10 Self-Rectifying Memristors for In-Memory Security and Reservoir Computing.. The journal of physical chemistry letters. https://doi.org/10.1021/acs.jpclett.6c02651
Source records
- pubmed · retrieved 2026-11-10T11:45:12.907Z