Invalidity of Band-Gap Engineering Concept for Bi(3+) Heterovalent Doping in CsPbBr(3) Halide Perovskite.

Lozhkina OA, Murashkina AA, Shilovskikh VV, Kapitonov YV, Ryabchuk VK, Emeline AV, Miyasaka T

Open source

DOI
10.1021/acs.jpclett.8b02178
Published
2018 Sep 20
Container
The journal of physical chemistry letters
Publisher
Not recorded
Open access
unknown

Credibility signals

limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1021/acs.jpclett.8b02178,
  title = {Invalidity of Band-Gap Engineering Concept for Bi(3+) Heterovalent Doping in CsPbBr(3) Halide Perovskite.},
  author = {Lozhkina OA and Murashkina AA and Shilovskikh VV and Kapitonov YV and Ryabchuk VK and Emeline AV and Miyasaka T},
  year = {2018},
  journal = {The journal of physical chemistry letters},
  doi = {10.1021/acs.jpclett.8b02178},
  url = {https://doi.org/10.1021/acs.jpclett.8b02178}
}

RIS

TY  - JOUR
TI  - Invalidity of Band-Gap Engineering Concept for Bi(3+) Heterovalent Doping in CsPbBr(3) Halide Perovskite.
AU  - Lozhkina OA
AU  - Murashkina AA
AU  - Shilovskikh VV
AU  - Kapitonov YV
AU  - Ryabchuk VK
AU  - Emeline AV
AU  - Miyasaka T
PY  - 2018
JO  - The journal of physical chemistry letters
DO  - 10.1021/acs.jpclett.8b02178
UR  - https://doi.org/10.1021/acs.jpclett.8b02178
ER  - 

APA

OA, L., AA, M., VV, S., YV, K., VK, R., AV, E., & T, M. (2018). Invalidity of Band-Gap Engineering Concept for Bi(3+) Heterovalent Doping in CsPbBr(3) Halide Perovskite.. The journal of physical chemistry letters. https://doi.org/10.1021/acs.jpclett.8b02178

Source records