Nitrogen Plasma Activation of SiO2 Surface for Low-Temperature Wafer-to-Wafer Bonding: Experiments and Multiscale Simulations
- DOI
- 10.1021/acs.langmuir.6c03389
- Published
- 2026-09-16
- Container
- Langmuir
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.langmuir.6c03389,
title = {Nitrogen Plasma
Activation of SiO2 Surface
for Low-Temperature Wafer-to-Wafer Bonding: Experiments and Multiscale
Simulations},
author = {Yaning Lin and Shangyu Lv and Xiangyang Shi and Rong Zeng and Xiaodan Li and Zhiwen Chen},
year = {2026},
journal = {Langmuir},
doi = {10.1021/acs.langmuir.6c03389},
url = {https://doi.org/10.1021/acs.langmuir.6c03389}
}RIS
TY - JOUR TI - Nitrogen Plasma Activation of SiO2 Surface for Low-Temperature Wafer-to-Wafer Bonding: Experiments and Multiscale Simulations AU - Yaning Lin AU - Shangyu Lv AU - Xiangyang Shi AU - Rong Zeng AU - Xiaodan Li AU - Zhiwen Chen PY - 2026 JO - Langmuir DO - 10.1021/acs.langmuir.6c03389 UR - https://doi.org/10.1021/acs.langmuir.6c03389 ER -
APA
Lin, Y., Lv, S., Shi, X., Zeng, R., Li, X., & Chen, Z. (2026). Nitrogen Plasma Activation of SiO2 Surface for Low-Temperature Wafer-to-Wafer Bonding: Experiments and Multiscale Simulations. Langmuir. https://doi.org/10.1021/acs.langmuir.6c03389
Source records
- crossref · retrieved 2026-11-10T14:04:02.255Z