Controlled Surface Ga Treatment to Suppress the Ostwald Ripening Process for InP Quantum Dots with Narrow-Bandwidth Emission.

Li J, Lo WK, Wang D, Xu Y, Ke W, Pu Y, Wang S

DOI: 10.1021/acs.langmuir.6c04166
Published: 2026 Nov 10
Container: Langmuir : the ACS journal of surfaces and colloids
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acs.langmuir.6c04166,
  title = {Controlled Surface Ga Treatment to Suppress the Ostwald Ripening Process for InP Quantum Dots with Narrow-Bandwidth Emission.},
  author = {Li J and Lo WK and Wang D and Xu Y and Ke W and Pu Y and Wang S},
  year = {2026},
  journal = {Langmuir : the ACS journal of surfaces and colloids},
  doi = {10.1021/acs.langmuir.6c04166},
  url = {https://doi.org/10.1021/acs.langmuir.6c04166}
}

RIS

TY  - JOUR
TI  - Controlled Surface Ga Treatment to Suppress the Ostwald Ripening Process for InP Quantum Dots with Narrow-Bandwidth Emission.
AU  - Li J
AU  - Lo WK
AU  - Wang D
AU  - Xu Y
AU  - Ke W
AU  - Pu Y
AU  - Wang S
PY  - 2026
JO  - Langmuir : the ACS journal of surfaces and colloids
DO  - 10.1021/acs.langmuir.6c04166
UR  - https://doi.org/10.1021/acs.langmuir.6c04166
ER  -

APA

J, L., WK, L., D, W., Y, X., W, K., Y, P., & S, W. (2026). Controlled Surface Ga Treatment to Suppress the Ostwald Ripening Process for InP Quantum Dots with Narrow-Bandwidth Emission.. Langmuir : the ACS journal of surfaces and colloids. https://doi.org/10.1021/acs.langmuir.6c04166

Source records

pubmed · retrieved 2026-11-10T18:53:02.983Z