Construction of an S-Scheme g-C3N4/In2S3 Heterojunction with a Boosted Interfacial Electric Field for Highly Efficient Photocatalytic Cr(VI) Reduction under Simulated Sunlight Irradiation.
- DOI
- 10.1021/acs.langmuir.6c05049
- Published
- 2026 Nov 10
- Container
- Langmuir : the ACS journal of surfaces and colloids
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.langmuir.6c05049,
title = {Construction of an S-Scheme g-C3N4/In2S3 Heterojunction with a Boosted Interfacial Electric Field for Highly Efficient Photocatalytic Cr(VI) Reduction under Simulated Sunlight Irradiation.},
author = {Fan Y and Zhou F and Feng L and Wang J and Xu J and Liu J and Li H and Zhang L and Wang H},
year = {2026},
journal = {Langmuir : the ACS journal of surfaces and colloids},
doi = {10.1021/acs.langmuir.6c05049},
url = {https://doi.org/10.1021/acs.langmuir.6c05049}
}RIS
TY - JOUR TI - Construction of an S-Scheme g-C3N4/In2S3 Heterojunction with a Boosted Interfacial Electric Field for Highly Efficient Photocatalytic Cr(VI) Reduction under Simulated Sunlight Irradiation. AU - Fan Y AU - Zhou F AU - Feng L AU - Wang J AU - Xu J AU - Liu J AU - Li H AU - Zhang L AU - Wang H PY - 2026 JO - Langmuir : the ACS journal of surfaces and colloids DO - 10.1021/acs.langmuir.6c05049 UR - https://doi.org/10.1021/acs.langmuir.6c05049 ER -
APA
Y, F., F, Z., L, F., J, W., J, X., J, L., H, L., L, Z., & H, W. (2026). Construction of an S-Scheme g-C3N4/In2S3 Heterojunction with a Boosted Interfacial Electric Field for Highly Efficient Photocatalytic Cr(VI) Reduction under Simulated Sunlight Irradiation.. Langmuir : the ACS journal of surfaces and colloids. https://doi.org/10.1021/acs.langmuir.6c05049
Source records
- pubmed · retrieved 2026-11-10T18:03:11.449Z