Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain.
- DOI
- 10.1021/acs.nanolett.1c02468
- Published
- 2021 Nov 10
- Container
- Nano letters
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.1c02468,
title = {Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain.},
author = {Holmér J and Zeng L and Kanne T and Krogstrup P and Nygård J and Olsson E},
year = {2021},
journal = {Nano letters},
doi = {10.1021/acs.nanolett.1c02468},
url = {https://doi.org/10.1021/acs.nanolett.1c02468}
}RIS
TY - JOUR TI - Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain. AU - Holmér J AU - Zeng L AU - Kanne T AU - Krogstrup P AU - Nygård J AU - Olsson E PY - 2021 JO - Nano letters DO - 10.1021/acs.nanolett.1c02468 UR - https://doi.org/10.1021/acs.nanolett.1c02468 ER -
APA
J, H., L, Z., T, K., P, K., J, N., & E, O. (2021). Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain.. Nano letters. https://doi.org/10.1021/acs.nanolett.1c02468
Source records
- pubmed · retrieved 2026-09-26T07:27:22.569Z