Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain
- DOI
- 10.1021/acs.nanolett.1c02468
- Published
- 2021-10-27
- Container
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.1c02468,
title = {Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain},
author = {Jonatan Holmér and Lunjie Zeng and Thomas Kanne and Peter Krogstrup and Jesper Nygård and Eva Olsson},
year = {2021},
journal = {Nano Letters},
doi = {10.1021/acs.nanolett.1c02468},
url = {https://doi.org/10.1021/acs.nanolett.1c02468}
}RIS
TY - JOUR TI - Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain AU - Jonatan Holmér AU - Lunjie Zeng AU - Thomas Kanne AU - Peter Krogstrup AU - Jesper Nygård AU - Eva Olsson PY - 2021 JO - Nano Letters DO - 10.1021/acs.nanolett.1c02468 UR - https://doi.org/10.1021/acs.nanolett.1c02468 ER -
APA
Holmér, J., Zeng, L., Kanne, T., Krogstrup, P., Nygård, J., & Olsson, E. (2021). Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain. Nano Letters. https://doi.org/10.1021/acs.nanolett.1c02468
Source records
- crossref · retrieved 2026-11-08T15:09:00.305Z