Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation.

Woo SY, Shao F, Arora A, Schneider R, Wu N, Mayne AJ, Ho CH, Och M, Mattevi C, Reserbat-Plantey A, Moreno Á, Sheinfux HH, Watanabe K, Taniguchi T, Michaelis de Vasconcellos S, Koppens FHL, Niu Z, Stéphan O, Kociak M, García de Abajo FJ, Bratschitsch R, Konečná A, Tizei LHG

Open source

DOI
10.1021/acs.nanolett.3c05063
Published
2024 Mar 27
Container
Nano letters
Publisher
Not recorded
Open access
unknown

Credibility signals

limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.3c05063,
  title = {Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation.},
  author = {Woo SY and Shao F and Arora A and Schneider R and Wu N and Mayne AJ and Ho CH and Och M and Mattevi C and Reserbat-Plantey A and Moreno Á and Sheinfux HH and Watanabe K and Taniguchi T and Michaelis de Vasconcellos S and Koppens FHL and Niu Z and Stéphan O and Kociak M and García de Abajo FJ and Bratschitsch R and Konečná A and Tizei LHG},
  year = {2024},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.3c05063},
  url = {https://doi.org/10.1021/acs.nanolett.3c05063}
}

RIS

TY  - JOUR
TI  - Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation.
AU  - Woo SY
AU  - Shao F
AU  - Arora A
AU  - Schneider R
AU  - Wu N
AU  - Mayne AJ
AU  - Ho CH
AU  - Och M
AU  - Mattevi C
AU  - Reserbat-Plantey A
AU  - Moreno Á
AU  - Sheinfux HH
AU  - Watanabe K
AU  - Taniguchi T
AU  - Michaelis de Vasconcellos S
AU  - Koppens FHL
AU  - Niu Z
AU  - Stéphan O
AU  - Kociak M
AU  - García de Abajo FJ
AU  - Bratschitsch R
AU  - Konečná A
AU  - Tizei LHG
PY  - 2024
JO  - Nano letters
DO  - 10.1021/acs.nanolett.3c05063
UR  - https://doi.org/10.1021/acs.nanolett.3c05063
ER  - 

APA

SY, W., F, S., A, A., R, S., N, W., AJ, M., CH, H., M, O., C, M., A, R., Á, M., HH, S., K, W., T, T., S, M. D. V., FHL, K., Z, N., O, S., M, K., FJ, G. D. A., R, B., A, K., & LHG, T. (2024). Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation.. Nano letters. https://doi.org/10.1021/acs.nanolett.3c05063

Source records