Large-Scale Dual-Channel WSe(2) Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic.
- DOI
- 10.1021/acs.nanolett.5c04744
- Published
- 2026 Feb 18
- Container
- Nano letters
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.5c04744,
title = {Large-Scale Dual-Channel WSe(2) Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic.},
author = {Yang E and Ma J and Lee C and Chang J},
year = {2026},
journal = {Nano letters},
doi = {10.1021/acs.nanolett.5c04744},
url = {https://doi.org/10.1021/acs.nanolett.5c04744}
}RIS
TY - JOUR TI - Large-Scale Dual-Channel WSe(2) Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic. AU - Yang E AU - Ma J AU - Lee C AU - Chang J PY - 2026 JO - Nano letters DO - 10.1021/acs.nanolett.5c04744 UR - https://doi.org/10.1021/acs.nanolett.5c04744 ER -
APA
E, Y., J, M., C, L., & J, C. (2026). Large-Scale Dual-Channel WSe(2) Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic.. Nano letters. https://doi.org/10.1021/acs.nanolett.5c04744
Source records
- pubmed · retrieved 2026-11-10T13:20:56.006Z