Large-Scale Dual-Channel WSe <sub>2</sub> Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic
- DOI
- 10.1021/acs.nanolett.5c04744
- Published
- 2026-02-05
- Container
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.5c04744,
title = {Large-Scale Dual-Channel WSe
<sub>2</sub>
Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic},
author = {Eunyeong Yang and Jiwon Ma and Changwook Lee and Jiwon Chang},
year = {2026},
journal = {Nano Letters},
doi = {10.1021/acs.nanolett.5c04744},
url = {https://doi.org/10.1021/acs.nanolett.5c04744}
}RIS
TY - JOUR
TI - Large-Scale Dual-Channel WSe
<sub>2</sub>
Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic
AU - Eunyeong Yang
AU - Jiwon Ma
AU - Changwook Lee
AU - Jiwon Chang
PY - 2026
JO - Nano Letters
DO - 10.1021/acs.nanolett.5c04744
UR - https://doi.org/10.1021/acs.nanolett.5c04744
ER - APA
Yang, E., Ma, J., Lee, C., & Chang, J. (2026). Large-Scale Dual-Channel WSe <sub>2</sub> Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic. Nano Letters. https://doi.org/10.1021/acs.nanolett.5c04744
Source records
- crossref · retrieved 2026-09-26T01:45:38.409Z