Large-Scale Dual-Channel WSe <sub>2</sub> Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic

Eunyeong Yang, Jiwon Ma, Changwook Lee, Jiwon Chang

Open source

DOI
10.1021/acs.nanolett.5c04744
Published
2026-02-05
Container
Nano Letters
Publisher
American Chemical Society (ACS)
Open access
unknown

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BibTeX

@article{allodium:10.1021/acs.nanolett.5c04744,
  title = {Large-Scale Dual-Channel WSe
                    <sub>2</sub>
                    Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic},
  author = {Eunyeong Yang and Jiwon Ma and Changwook Lee and Jiwon Chang},
  year = {2026},
  journal = {Nano Letters},
  doi = {10.1021/acs.nanolett.5c04744},
  url = {https://doi.org/10.1021/acs.nanolett.5c04744}
}

RIS

TY  - JOUR
TI  - Large-Scale Dual-Channel WSe
                    <sub>2</sub>
                    Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic
AU  - Eunyeong Yang
AU  - Jiwon Ma
AU  - Changwook Lee
AU  - Jiwon Chang
PY  - 2026
JO  - Nano Letters
DO  - 10.1021/acs.nanolett.5c04744
UR  - https://doi.org/10.1021/acs.nanolett.5c04744
ER  - 

APA

Yang, E., Ma, J., Lee, C., & Chang, J. (2026). Large-Scale Dual-Channel WSe <sub>2</sub> Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic. Nano Letters. https://doi.org/10.1021/acs.nanolett.5c04744

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