Charge-State Control of Modified Divacancies in Silicon Carbide.

Lin WX, Hu QC, Hao ZH, He ZX, Zhou JY, Sukmas W, Potiyaraj P, Xu JS, Li CF, Guo GC

DOI: 10.1021/acs.nanolett.5c05874
Published: 2026 Feb 25
Container: Nano letters
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.5c05874,
  title = {Charge-State Control of Modified Divacancies in Silicon Carbide.},
  author = {Lin WX and Hu QC and Hao ZH and He ZX and Zhou JY and Sukmas W and Potiyaraj P and Xu JS and Li CF and Guo GC},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.5c05874},
  url = {https://doi.org/10.1021/acs.nanolett.5c05874}
}

RIS

TY  - JOUR
TI  - Charge-State Control of Modified Divacancies in Silicon Carbide.
AU  - Lin WX
AU  - Hu QC
AU  - Hao ZH
AU  - He ZX
AU  - Zhou JY
AU  - Sukmas W
AU  - Potiyaraj P
AU  - Xu JS
AU  - Li CF
AU  - Guo GC
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.5c05874
UR  - https://doi.org/10.1021/acs.nanolett.5c05874
ER  -

APA

WX, L., QC, H., ZH, H., ZX, H., JY, Z., W, S., P, P., JS, X., CF, L., & GC, G. (2026). Charge-State Control of Modified Divacancies in Silicon Carbide.. Nano letters. https://doi.org/10.1021/acs.nanolett.5c05874

Source records

pubmed · retrieved 2026-09-25T20:32:46.772Z