Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates.

Park J, Jang H, Sohn H, Song Y, Stehouwer LEA, Degli Esposti D, Scappucci G, Kim D

Open source

DOI
10.1021/acs.nanolett.6c00044
Published
2026 Jun 17
Container
Nano letters
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1021/acs.nanolett.6c00044,
  title = {Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates.},
  author = {Park J and Jang H and Sohn H and Song Y and Stehouwer LEA and Degli Esposti D and Scappucci G and Kim D},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c00044},
  url = {https://doi.org/10.1021/acs.nanolett.6c00044}
}

RIS

TY  - JOUR
TI  - Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates.
AU  - Park J
AU  - Jang H
AU  - Sohn H
AU  - Song Y
AU  - Stehouwer LEA
AU  - Degli Esposti D
AU  - Scappucci G
AU  - Kim D
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c00044
UR  - https://doi.org/10.1021/acs.nanolett.6c00044
ER  - 

APA

J, P., H, J., H, S., Y, S., LEA, S., D, D. E., G, S., & D, K. (2026). Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c00044

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