Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective.

Tang L, Yang P

DOI: 10.1021/acs.nanolett.6c00466
Published: 2026 Apr 22
Container: Nano letters
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.6c00466,
  title = {Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective.},
  author = {Tang L and Yang P},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c00466},
  url = {https://doi.org/10.1021/acs.nanolett.6c00466}
}

RIS

TY  - JOUR
TI  - Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective.
AU  - Tang L
AU  - Yang P
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c00466
UR  - https://doi.org/10.1021/acs.nanolett.6c00466
ER  -

APA

L, T., & P, Y. (2026). Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c00466

Source records

pubmed · retrieved 2026-09-26T07:03:54.516Z