Strain Engineering of MoS2 for Overcoming Thermal Bottlenecks in Next-Generation Energy-Efficient Electronics.

Xue J, Zhang Y, Fan A, Hou X, Ma W, Zhang X

DOI: 10.1021/acs.nanolett.6c00716
Published: 2026 Sep 2
Container: Nano letters
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.6c00716,
  title = {Strain Engineering of MoS2 for Overcoming Thermal Bottlenecks in Next-Generation Energy-Efficient Electronics.},
  author = {Xue J and Zhang Y and Fan A and Hou X and Ma W and Zhang X},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c00716},
  url = {https://doi.org/10.1021/acs.nanolett.6c00716}
}

RIS

TY  - JOUR
TI  - Strain Engineering of MoS2 for Overcoming Thermal Bottlenecks in Next-Generation Energy-Efficient Electronics.
AU  - Xue J
AU  - Zhang Y
AU  - Fan A
AU  - Hou X
AU  - Ma W
AU  - Zhang X
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c00716
UR  - https://doi.org/10.1021/acs.nanolett.6c00716
ER  -

APA

J, X., Y, Z., A, F., X, H., W, M., & X, Z. (2026). Strain Engineering of MoS2 for Overcoming Thermal Bottlenecks in Next-Generation Energy-Efficient Electronics.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c00716

Source records

pubmed · retrieved 2026-09-25T18:54:45.642Z