Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS <sub>3</sub> Transistors
- DOI
- 10.1021/acs.nanolett.6c01267
- Published
- 2026-07-06
- Container
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.6c01267,
title = {Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS
<sub>3</sub>
Transistors},
author = {Thomas W. Song and M. S. Nicholas Tey and Junjie Wang and Ethan S. Garvey and Margaret R. Quinn and Danilo Puggioni and Dmitry Lebedev and Rui Gusmão and Zdeněk Sofer and Kenji Watanabe and Takashi Taniguchi and James M. Rondinelli and Nathaniel P. Stern and Vinod K. Sangwan and Mark C. Hersam},
year = {2026},
journal = {Nano Letters},
doi = {10.1021/acs.nanolett.6c01267},
url = {https://doi.org/10.1021/acs.nanolett.6c01267}
}RIS
TY - JOUR
TI - Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS
<sub>3</sub>
Transistors
AU - Thomas W. Song
AU - M. S. Nicholas Tey
AU - Junjie Wang
AU - Ethan S. Garvey
AU - Margaret R. Quinn
AU - Danilo Puggioni
AU - Dmitry Lebedev
AU - Rui Gusmão
AU - Zdeněk Sofer
AU - Kenji Watanabe
AU - Takashi Taniguchi
AU - James M. Rondinelli
AU - Nathaniel P. Stern
AU - Vinod K. Sangwan
AU - Mark C. Hersam
PY - 2026
JO - Nano Letters
DO - 10.1021/acs.nanolett.6c01267
UR - https://doi.org/10.1021/acs.nanolett.6c01267
ER - APA
Song, T. W., Tey, M. S. N., Wang, J., Garvey, E. S., Quinn, M. R., Puggioni, D., Lebedev, D., Gusmão, R., Sofer, Z., Watanabe, K., Taniguchi, T., Rondinelli, J. M., Stern, N. P., Sangwan, V. K., & Hersam, M. C. (2026). Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS <sub>3</sub> Transistors. Nano Letters. https://doi.org/10.1021/acs.nanolett.6c01267
Source records
- crossref · retrieved 2026-09-26T23:38:19.092Z